Ngokuqhelekileyo, kunzima ukuphepha inani elincinci lokungaphumeleli kuphuhliso, ukuveliswa kunye nokusetyenziswa kwezixhobo ze-semiconductor.Ngokuphuculwa okuqhubekayo kweemfuno zomgangatho wemveliso, uhlalutyo lokungaphumeleli luba lubaluleke ngakumbi nangakumbi.Ngokuhlalutya iitshiphusi ezithile zokungaphumeleli, Inokunceda abaqulunqi beesekethe bafumane iziphene zoyilo lwesixhobo, ukungahambelani kweeparamitha zenkqubo, uyilo olungekho ngqiqweni lwesekethe ye-peripheral okanye i-misoperation ebangelwa yingxaki.Imfuneko yohlalutyo lokusilela kwezixhobo ze-semiconductor ibonakaliswa ikakhulu kule miba ilandelayo:
(1) Uhlalutyo lokusilela yindlela eyimfuneko yokumisela ukusilela kwesixhobo setshiphu;
(2) Uhlalutyo lokungaphumeleli lubonelela ngesiseko esiyimfuneko kunye nolwazi lokuxilongwa ngokufanelekileyo kwesiphoso;
(3) Uhlalutyo lokungaphumeleli lubonelela ngolwazi oluyimfuneko lwengxelo kwiinjineli zoyilo ukuze ziqhubeke ziphucula okanye zilungise uyilo lwetshiphu kwaye luyenze lube nengqiqo ngakumbi ngokuhambelana neenkcukacha zoyilo;
(4) Uhlalutyo lokungaphumeleli lunokubonelela ngezongezelelo eziyimfuneko zovavanyo lwemveliso kunye nokubonelela ngesiseko solwazi oluyimfuneko ukulungiselela inkqubo yovavanyo lokuqinisekisa.
Uhlalutyo lokungaphumeleli kwe-semiconductor diodes, i-audions okanye iisekethe ezidibeneyo, iiparamitha zombane kufuneka zivavanywe kuqala, kwaye emva kokuhlolwa kokubonakala phantsi kwe-microscope ebonakalayo, ukupakishwa kufuneka kususwe.Ngelixa ugcina ingqibelelo yomsebenzi we-chip, umkhombandlela wangaphakathi nangaphandle, amanqaku okudibanisa kunye nomphezulu we-chip kufuneka agcinwe ngokusemandleni, ukwenzela ukuba alungiselele isinyathelo esilandelayo sokuhlalutya.
Ukusebenzisa i-electron microscopy yokuskena kunye ne-energy spectrum ukwenza olu hlalutyo: kubandakanywa ukuqwalaselwa kwe-morphology ye-microscopic, ukukhangela indawo yokusilela, ukujongwa kwendawo yesiphene kunye nendawo, umlinganiselo ochanekileyo wesixhobo sobungakanani bejometri yesixhobo kunye nosasazo olunokubakho lomphezulu kunye nesigwebo sengqiqo yesango ledijithali. isiphaluka (ngendlela yomfanekiso wokuchasana kombane);Sebenzisa i-spectrometer yamandla okanye i-spectrometer ukwenza olu hlalutyo lunayo: uhlalutyo lokuqulunqwa kwezinto ezincinci, ulwakhiwo lwemathiriyeli okanye uhlalutyo longcoliseko.
01. Iziphene zobuso kunye nokutshiswa kwezixhobo ze-semiconductor
Iziphene zobuso kunye nokutshiswa kwezixhobo ze-semiconductor zombini iindlela zokungaphumeleli eziqhelekileyo, njengoko kuboniswe kuMzobo 1, osisiphene somgangatho ococekileyo wesekethe edibeneyo.
Umzobo we-2 ubonisa isiphene somgangatho we-metalized layer yesekethe edibeneyo.
Umzobo 3 ubonisa umjelo wokuqhawula phakathi kweentsimbi ezimbini zesekethe edibeneyo.
Umzobo we-4 ubonisa ukuwa kwentsimbi kunye ne-skew deformation kwibhulorho yomoya kwisixhobo se-microwave.
Umzobo 5 ubonisa ukutshiswa kwegridi kwityhubhu ye-microwave.
Umzobo we-6 ubonisa umonakalo womatshini kwintambo yombane edibeneyo yombane.
Umzobo 7 ubonisa ukuvulwa kwetshiphu ye-mesa diode kunye nesiphene.
Umzobo we-8 ubonisa ukuchithwa kwediode yokukhusela kwigalelo lesekethe edibeneyo.
Umzobo we-9 ubonisa ukuba umphezulu we-chip yesekethe edibeneyo yonakaliswe yimpembelelo yomatshini.
Umzobo we-10 ubonisa ukutshiswa kwenxalenye ye-chip yesekethe edibeneyo.
Umzobo we-11 ubonisa i-chip ye-diode yaphulwa kwaye yatshiswa kakhulu, kwaye iindawo zokuqhawula zajika zaba yimeko yokunyibilika.
Umzobo we-12 ubonisa i-gallium nitride microwave yamandla etyhubhu yetyhubhu etshisiweyo, kwaye indawo etshileyo ibonisa imeko etyhidiweyo yokutshiza.
02. Ukuqhekeka kwe-Electrostatic
Izixhobo ze-Semiconductor ezivela kwimveliso, ukupakishwa, ukuthutha kude kube kwibhodi yesekethe yokufakwa, i-welding, indibano yomatshini kunye nezinye iinkqubo ziphantsi kwesoyikiso sombane ongatshintshiyo.Kule nkqubo, ukuthutha konakaliswa ngenxa yokuhamba rhoqo kunye nokuvezwa lula kumbane ongatshintshiyo owenziwe lihlabathi langaphandle.Ngoko ke, ingqalelo ekhethekileyo kufuneka ihlawulwe ekukhuselweni kwe-electrostatic ngexesha lokudluliselwa kunye nokuthutha ukunciphisa ilahleko.
Kwizixhobo zesemiconductor ene-unipolar MOS ityhubhu kunye ne-MOS yesekethe edibeneyo inomdla ngakumbi kumbane ongatshintshiyo, ngakumbi ityhubhu yeMOS, ngenxa yokumelana negalelo layo liphezulu kakhulu, kwaye isango lomthombo we-electrode capacitance lincinci kakhulu, ngoko kulula kakhulu ukuba uchatshazelwa yintsimi ye-electromagnetic yangaphandle okanye ukufakwa kwe-electrostatic kunye nokutshaja, kwaye ngenxa yesizukulwana se-electrostatic, kunzima ukukhupha intlawulo ngexesha, Ke ngoko, kulula ukubangela ukuqokelelwa kombane ongatshintshiyo ukuwohloka kwangoko kwesixhobo.Uhlobo lokuqhekeka kwe-electrostatic ikakhulu kukuqhekeka kombane okukrelekrele, oko kukuthi, umaleko obhityileyo we-oxide wegridi yaphukile, yenze umngxuma, omfutshane phakathi kwegridi kunye nomthombo okanye phakathi kwegridi kunye nedreyini.
Kwaye ngokunxulumene ne-MOS ityhubhu ye-MOS yesekethe edibeneyo yokuqhekeka kwe-antistatic amandla angcono kancinci, kuba i-terminal yegalelo le-MOS yesekethe edibeneyo ixhotyiswe ngediode yokukhusela.Nje ukuba kubekho amandla ombane amakhulu e-electrostatic okanye amandla ombane onyukayo kuninzi lweediode ezikhuselayo zinokutshintshelwa emhlabeni, kodwa ukuba i-voltage iphezulu kakhulu okanye i-amplification yangoku inkulu kakhulu, ngamanye amaxesha iidiode ezikhuselayo ziya kuthi ngokwazo, njengoko kubonisiwe kuMfanekiso. 8.
Imifanekiso emininzi eboniswe kumfanekiso13 yi-electrostatic breakdown topography yesekethe edibeneyo yeMOS.Indawo yokuqhawuka incinci kwaye inzulu, ibonisa imeko etyhidiweyo yokutshiza.
Umzobo we-14 ubonisa inkangeleko ye-electrostatic breakdown yentloko kazibuthe yehard disk yekhompyutha.
Ixesha lokuposa: Jul-08-2023