Ngokuqhelekileyo, kunzima ukuphepha inani elincinci lokungaphumeleli kuphuhliso, ukuveliswa kunye nokusetyenziswa kwezixhobo ze-semiconductor. Ngokuphuculwa okuqhubekayo kweemfuno zomgangatho wemveliso, uhlalutyo lokungaphumeleli luba lubaluleke ngakumbi nangakumbi. Ngokuhlalutya iitshiphusi ezithile zokungaphumeleli, Inokunceda abaqulunqi beesekethe bafumane iziphene zoyilo lwesixhobo, ukungahambelani kweeparamitha zenkqubo, uyilo olungekho ngqiqweni lwesekethe ye-peripheral okanye i-misoperation ebangelwa yingxaki. Imfuneko yohlalutyo lokusilela kwezixhobo ze-semiconductor ibonakaliswa ikakhulu kule miba ilandelayo:
(1) Uhlalutyo lokusilela yindlela eyimfuneko yokumisela ukusilela kwesixhobo setshiphu;
(2) Uhlalutyo lokungaphumeleli lubonelela ngesiseko esiyimfuneko kunye nolwazi lokuxilongwa ngokufanelekileyo kwesiphoso;
(3) Uhlalutyo lokungaphumeleli lubonelela ngolwazi oluyimfuneko lwengxelo kwiinjineli zoyilo ukuze ziqhubeke ziphucula okanye zilungise uyilo lwetshiphu kwaye luyenze lube nengqiqo ngakumbi ngokuhambelana neenkcukacha zoyilo;
(4) Uhlalutyo lokungaphumeleli lunokubonelela ngezongezelelo eziyimfuneko zovavanyo lwemveliso kunye nokubonelela ngesiseko solwazi oluyimfuneko ukulungiselela inkqubo yovavanyo lokuqinisekisa.
Uhlalutyo olungaphumeleliyo lwe-semiconductor diodes, i-audions okanye iisekethe ezidibeneyo, iiparamitha zombane kufuneka zivavanywe kuqala, kwaye emva kokuhlolwa kwembonakalo phantsi kwe-microscope ebonakalayo, ukupakishwa kufuneka kususwe. Ngelixa ugcina ingqibelelo yomsebenzi we-chip, umkhombandlela wangaphakathi nangaphandle, amanqaku okudibanisa kunye nomphezulu we-chip kufuneka agcinwe ngokusemandleni, ukwenzela ukuba alungiselele isinyathelo esilandelayo sokuhlalutya.
Ukusebenzisa i-electron microscopy yokuskena kunye ne-energy spectrum ukwenza olu hlalutyo: kubandakanywa ukuqwalaselwa kwe-morphology ye-microscopic, ukukhangela indawo yokusilela, ukujongwa kwendawo yesiphene kunye nendawo, umlinganiselo ochanekileyo wesixhobo sobungakanani bejometri yesixhobo kunye nosasazo olunokubakho lomphezulu kunye nesigwebo sengqiqo yesango ledijithali. isiphaluka (ngendlela yomfanekiso wokuchasana kombane); Sebenzisa i-spectrometer yamandla okanye i-spectrometer ukwenza olu hlalutyo lunayo: uhlalutyo lokuqulunqwa kwezinto ezincinci, ulwakhiwo lwemathiriyeli okanye uhlalutyo longcoliseko.
01. Iziphene zobuso kunye nokutshiswa kwezixhobo ze-semiconductor
Iziphene zobuso kunye nokutshiswa kwezixhobo ze-semiconductor zombini iindlela zokungaphumeleli eziqhelekileyo, njengoko kuboniswe kuMzobo 1, osisiphene somgangatho ococekileyo wesekethe edibeneyo.
Umzobo we-2 ubonisa isiphene somgangatho we-metalized layer yesekethe edibeneyo.
Umzobo 3 ubonisa umjelo wokuqhawula phakathi kweentsimbi ezimbini zesekethe edibeneyo.
Umzobo we-4 ubonisa ukuwa kwentsimbi kunye ne-skew deformation kwibhulorho yomoya kwisixhobo se-microwave.
Umzobo 5 ubonisa ukutshiswa kwegridi kwityhubhu ye-microwave.
Umzobo we-6 ubonisa umonakalo womatshini kwintambo yombane edibeneyo yombane.
Umzobo 7 ubonisa ukuvulwa kwetshiphu ye-mesa diode kunye nesiphene.
Umzobo we-8 ubonisa ukuchithwa kwediode yokukhusela kwigalelo lesekethe edibeneyo.
Umzobo we-9 ubonisa ukuba umphezulu we-chip yesekethe edibeneyo yonakaliswe yimpembelelo yomatshini.
Umzobo we-10 ubonisa ukutshiswa kwenxalenye ye-chip yesekethe edibeneyo.
Umzobo we-11 ubonisa i-chip ye-diode yaphulwa kwaye yatshiswa kakhulu, kwaye iindawo zokuqhawula zajika zaba yimeko yokunyibilika.
Umzobo we-12 ubonisa i-gallium nitride microwave yamandla etyhubhu yetyhubhu etshisiweyo, kwaye indawo etshileyo ibonisa imeko etyhidiweyo yokutshiza.
02. Ukuqhekeka kwe-Electrostatic
Izixhobo ze-Semiconductor ezivela kwimveliso, ukupakishwa, ukuthutha kude kube kwibhodi yesekethe yokufakwa, i-welding, indibano yomatshini kunye nezinye iinkqubo ziphantsi kwesoyikiso sombane ongatshintshiyo. Kule nkqubo, ukuthutha konakaliswe ngenxa yokuhamba rhoqo kunye nokuvezwa lula kumbane ongatshintshiyo owenziwe lihlabathi langaphandle. Ngoko ke, ingqalelo ekhethekileyo kufuneka ihlawulwe ekukhuselweni kwe-electrostatic ngexesha lokudluliselwa kunye nokuthutha ukunciphisa ilahleko.
Kwizixhobo zesemiconductor ene-unipolar MOS ityhubhu kunye ne-MOS yesekethe edibeneyo inomdla ngakumbi kumbane ongatshintshiyo, ngakumbi ityhubhu yeMOS, ngenxa yokumelana negalelo layo liphezulu kakhulu, kwaye isango lomthombo we-electrode capacitance lincinci kakhulu, ngoko kulula kakhulu ukuba uchatshazelwa yintsimi ye-electromagnetic yangaphandle okanye ukufakwa kwe-electrostatic kunye nokutshaja, kwaye ngenxa yesizukulwana se-electrostatic, kunzima ukukhupha intlawulo ngexesha, Ke ngoko, kulula ukubangela ukuqokelelwa kombane ongatshintshiyo ukuwohloka kwangoko kwesixhobo. Uhlobo lokuqhekeka kwe-electrostatic ikakhulu kukuqhekeka kombane okukrelekrele, oko kukuthi, umaleko obhityileyo we-oxide wegridi yaphukile, yenze umngxuma, omfutshane phakathi kwegridi kunye nomthombo okanye phakathi kwegridi kunye nedreyini.
Kwaye ngokunxulumene ne-MOS ityhubhu ye-MOS yesekethe edibeneyo yokuqhekeka kwe-antistatic amandla angcono kancinci, kuba i-terminal yegalelo le-MOS yesekethe edibeneyo ixhotyiswe ngediode yokukhusela. Nje ukuba kubekho amandla ombane amakhulu e-electrostatic okanye amandla ombane onyukayo kuninzi lweediode ezikhuselayo zinokutshintshelwa emhlabeni, kodwa ukuba i-voltage iphezulu kakhulu okanye i-amplification yangoku inkulu kakhulu, ngamanye amaxesha iidiode ezikhuselayo ziya kuthi ngokwazo, njengoko kubonisiwe kuMfanekiso. 8.
Imifanekiso emininzi eboniswe kumfanekiso13 yi-electrostatic breakdown topography yesekethe edibeneyo yeMOS. Indawo yokuqhawuka incinci kwaye inzulu, ibonisa imeko etyhidiweyo yokutshiza.
Umzobo we-14 ubonisa inkangeleko ye-electrostatic breakdown yentloko kazibuthe yehard disk yekhompyutha.
Ixesha lokuposa: Jul-08-2023
