Iindleko zenkqubo yokugcina amandla ziqulunqwe ikakhulu ngamabhetri kunye ne-inverters yokugcina amandla. Itotali yezi zimbini zenza i-80% yeendleko zenkqubo yokugcina amandla e-electrochemical, apho i-inverter yokugcina amandla ithatha i-20%. I-IGBT ye-insulating grid bipolar crystal yinto ephuma phezulu ye-inverter yokugcina amandla. Ukusebenza kwe-IGBT kugqiba ukusebenza kwe-inverter yokugcina amandla, i-akhawunti ye-20% -30% yexabiso le-inverter.
Indima ephambili ye-IGBT kwindawo yokugcina amandla yi-transformer, ukuguqulwa kwamaxesha amaninzi, ukuguqulwa kwe-intervolution, njl., Esi sisixhobo esiyimfuneko kwizicelo zokugcina amandla.
Umzobo: Imodyuli ye-IGBT
Izixhobo ezinyukayo zokugcinwa kwamandla okuguquguqukayo ziquka i-IGBT, i-capacitance, ukumelana, ukuxhathisa kombane, i-PCB, njl. Kusekho umsantsa phakathi kwe-IGBT yasekhaya kwinqanaba lobuchwepheshe kunye nenqanaba eliphambili lehlabathi. Nangona kunjalo, ngophuhliso olukhawulezayo lweshishini lokugcina amandla eTshayina, inkqubo yokwenziwa ekhaya kwe-IGBT nayo kulindeleke ukuba ikhawuleze.
IGBT ixabiso lesicelo sogcino lwamandla
Xa kuthelekiswa ne-photovoltaic, ixabiso lokugcinwa kwamandla e-IGBT liphezulu. Ukugcinwa kwamandla kusebenzisa i-IGBT kunye ne-SIC engaphezulu, ebandakanya izixhumanisi ezimbini: i-DCDC kunye ne-DACAC, kubandakanywa nezisombululo ezimbini, ezizezi ukugcinwa kwe-optical edibeneyo kunye nenkqubo yokugcina amandla. Inkqubo yokugcina amandla ezimeleyo, ubungakanani bezixhobo ze-semiconductor zamandla malunga ne-1.5 amaxesha e-photovoltaic. Okwangoku, ukugcinwa kwe-optical kungabangela ngaphezu kwe-60-70%, kwaye inkqubo yokugcinwa kwamandla ehlukeneyo i-akhawunti ye-30%.
Umzobo: Imodyuli ye-BYD IGBT
I-IGBT inoluhlu olubanzi lweereyile zesicelo, eziluncedo ngakumbi kune-MOSFET kwi-inverter yokugcina amandla. Kwiiprojekthi zokwenyani, i-IGBT ithe chu ngokuthe ngcembe yathatha indawo ye-MOSFET njengesixhobo esingundoqo se-photovoltaic inverters kunye nokuveliswa kwamandla omoya. Uphuhliso olukhawulezayo lweshishini elitsha lokuvelisa amandla luya kuba yinto entsha yokuqhuba ishishini le-IGBT.
I-IGBT sisixhobo esingundoqo sokuguqulwa kwamandla kunye nokuhanjiswa
I-IGBT inokuqondwa ngokupheleleyo njenge-transistor elawula i-electronic two-way (multi-directional) ehamba nokulawula i-valve.
I-IGBT yi-composite epheleleyo-yokulawula i-voltage -isixhobo esiqhutywa ngamandla se-semiconductor esiqulunqwe yi-BJT bipolar triode kunye ne-insulating grid effect field. Iinzuzo zemiba emibini yoxinzelelo lwehla.
Umzobo: I-IGBT yemodyuli yesakhiwo somzobo weskimu
Umsebenzi wokutshintsha we-IGBT kukwenza umjelo ngokufaka i-positive kwi-voltage yesango ukubonelela ngesiseko sangoku kwi-PNP transistor ukuqhuba i-IGBT. Ngokwahlukileyo koko, yongeza i-voltage yocango oluguquguqukayo ukuphelisa isitishi, uqukuqelele kwisiseko sangoku, kwaye ucime i-IGBT. Indlela yokuqhuba ye-IGBT ngokusisiseko iyafana naleyo ye-MOSFET. Ifuna kuphela ukulawula ipali yokufaka i-N one-channel MOSFET, ke ineempawu eziphezulu ze-impedance.
I-IGBT sisixhobo esingundoqo sokuguqulwa kwamandla kunye nokuhanjiswa. Ngokuqhelekileyo yaziwa njenge "CPU" yezixhobo zombane zombane. Njengoshishino olusakhulayo lweqhinga lesizwe, lisetyenziswe ngokubanzi kwizixhobo zamandla amatsha kunye namanye amacandelo.
I-IGBT ineengenelo ezininzi ezibandakanya i-impedance ephezulu, amandla olawulo oluphantsi, isekethe yokuqhuba elula, isantya sokutshintsha ngokukhawuleza, imeko yangoku enkulu, uxinzelelo oluncitshisiweyo lokuphazamiseka, kunye nelahleko encinci. Ke ngoko, ineengenelo ezipheleleyo kwindawo yentengiso yangoku.
Ke ngoko, i-IGBT iye yaba yeyona nto iphambili kwimakethi yangoku ye-semiconductor yamandla. Isetyenziswa ngokubanzi kwiindawo ezininzi ezifana nokuvelisa amandla amatsha, izithuthi zombane kunye neemfumba zokutshaja, iinqanawa ezinombane, ukuhanjiswa kwe-DC, ukugcinwa kwamandla, ulawulo lombane kwimizi-mveliso kunye nokonga amandla.
Umfanekiso:InfineonImodyuli ye-IGBT
Ukuhlelwa kwe-IGBT
Ngokutsho kwesakhiwo semveliso eyahlukeneyo, i-IGBT ineentlobo ezintathu: umbhobho owodwa, imodyuli ye-IGBT kunye nemodyuli yamandla ehlakaniphile i-IPM.
(Iimfumba zokutshaja) kunye nezinye iindawo (ubukhulu becala iimveliso zemodyuli ezinje zithengiswa kwimarike yangoku). Imodyuli yamandla akrelekrele i-IPM isetyenziswa kakhulu kwintsimi yezixhobo zasekhaya ezimhlophe ezifana ne-inverter air conditioners kunye noomatshini bokuhlamba ukuguqulwa kwamaza.
Ngokuxhomekeke kumbane wemeko yesicelo, i-IGBT ineentlobo ezifana ne-ultra-low voltage, i-voltage ephantsi, i-voltage ephakathi kunye nombane ophezulu.
Phakathi kwazo, i-IGBT esetyenziswa zizithuthi zamandla amatsha, ulawulo lwemizi-mveliso, kunye nezixhobo zendlu ubukhulu becala ziphakathi kwamandla ombane, ngelixa uthutho lukaloliwe, ukuveliswa kwamandla amatsha kunye neegridi ezihlakaniphile zineemfuno zombane eziphezulu, ikakhulu zisebenzisa i-IGBT ephezulu.
I-IGBT ibonakala ikwimo yeemodyuli. Idatha ye-IHS ibonisa ukuba umlinganiselo weemodyuli kunye ityhubhu enye yi-3: 1. Imodyuli yimveliso yemodyuli ye-semiconductor eyenziwe yi-chip ye-IGBT kunye ne-FWD (i-diode chip eqhubekayo) ngokusebenzisa ibhulorho yesekethe eyenziwe ngokwezifiso, kunye nezakhelo zeplastiki, i-substrates kunye ne-substrates. , njl.
Mimeko yomkhumbi:
Iinkampani zaseTshayina zikhula ngokukhawuleza, kwaye okwangoku zixhomekeke kwizinto ezithunyelwa ngaphandle
Ngo-2022, ishishini le-IGBT lelizwe lam libe nemveliso yezigidi ezingama-41, kunye nemfuno emalunga ne-156 yezigidi, kunye nezinga lokuzimela le-26.3%. Okwangoku, imakethi ye-IGBT yasekhaya ihlalwa ikakhulu ngabavelisi baphesheya abanje ngeYingfei Ling, Mitsubishi Motor, kunye neFuji Electric, elona candelo liphezulu yi-Yingfei Ling, eyi-15.9%.
Imodyuli yemodyuli ye-IGBT i-CR3 ifikelele kwi-56.91%, kwaye isabelo sisonke sabavelisi basekhaya be-Star Director kunye nexesha le-CRRC lika-5.01% laliyi-5.01%. Isabelo semarike sabavelisi abaphezulu besixhobo sokwahlulahlula se-IGBT sehlabathi sifikelele kuma-53.24%. Abavelisi basekhaya bangene kwisabelo esiphezulu semarike ezilishumi sesixhobo se-IGBT sehlabathi kunye nesabelo semarike ye-3.5%.
I-IGBT ibonakala ikwimo yeemodyuli. Idatha ye-IHS ibonisa ukuba umlinganiselo weemodyuli kunye ityhubhu enye yi-3: 1. Imodyuli yimveliso yemodyuli ye-semiconductor eyenziwe yi-chip ye-IGBT kunye ne-FWD (i-diode chip eqhubekayo) ngokusebenzisa ibhulorho yesekethe eyenziwe ngokwezifiso, kunye nezakhelo zeplastiki, i-substrates kunye ne-substrates. , njl.
Mimeko yomkhumbi:
Iinkampani zaseTshayina zikhula ngokukhawuleza, kwaye okwangoku zixhomekeke kwizinto ezithunyelwa ngaphandle
Ngo-2022, ishishini le-IGBT lelizwe lam libe nemveliso yezigidi ezingama-41, kunye nemfuno emalunga ne-156 yezigidi, kunye nezinga lokuzimela le-26.3%. Okwangoku, imakethi ye-IGBT yasekhaya ihlalwa ikakhulu ngabavelisi baphesheya abanje ngeYingfei Ling, Mitsubishi Motor, kunye neFuji Electric, elona candelo liphezulu yi-Yingfei Ling, eyi-15.9%.
Imodyuli yemodyuli ye-IGBT i-CR3 ifikelele kwi-56.91%, kwaye isabelo sisonke sabavelisi basekhaya be-Star Director kunye nexesha le-CRRC lika-5.01% laliyi-5.01%. Isabelo semarike sabavelisi abaphezulu besixhobo sokwahlulahlula se-IGBT sehlabathi sifikelele kuma-53.24%. Abavelisi basekhaya bangene kwisabelo esiphezulu semarike ezilishumi sesixhobo se-IGBT sehlabathi kunye nesabelo semarike ye-3.5%.
Ixesha lokuposa: Jul-08-2023
