Iiprojekthi ezininzi zeenjineli ze-hardware zigqitywe kwibhodi yomngxuma, kodwa kukho into eyenzeka ngengozi yokudibanisa iitheminali ezilungileyo nezingalunganga zonikezelo lwamandla, nto leyo ekhokelela kumalungu amaninzi e-elektroniki avuthayo, kwaye ibhodi yonke itshatyalalisiwe, kwaye kufuneka ukuba i-welded kwakhona, andazi ukuba yeyiphi indlela elungileyo yokuyicombulula?
Okokuqala, ukungakhathali akunakuphepheka, nangona kuphela ukwahlula iingcingo ezimbini ezintle nezimbi, ezibomvu nezimnyama, zinokutsalwa kanye, asiyi kuzenza iimpazamo; Uqhagamshelo olulishumi aluyi kuhamba kakubi, kodwa i-1,000? Kuthekani nge-10,000? Ngeli xesha kunzima ukuthetha, ngenxa yokungakhathali kwethu, okukhokelela kumacandelo athile e-elektroniki kunye neetshiphusi zitshiswe, esona sizathu siphambili kukuba icandelo le-ambassador langoku lixakile, ngoko ke kufuneka sithathe amanyathelo okuthintela uqhagamshelo olubuyela umva. .
Kukho ezi ndlela zilandelayo zisetyenziswa rhoqo:
01 diode series uhlobo anti-reverse ukhuselo lwesekethe
I-diode yangaphambili idityaniswe kuluhlu kwigalelo lamandla afanelekileyo ukuze kusetyenziswe ngokupheleleyo iimpawu zediode zokuqhuba phambili kunye ne-reverse cutoff. Kwiimeko eziqhelekileyo, ityhubhu yesibini iqhuba kwaye ibhodi yesiphaluka isebenza.
Xa ukunikezelwa kombane kuguqulwa, i-diode iyanqunyulwa, ukunikezelwa kwamandla akukwazi ukwenza i-loop, kwaye ibhodi yesiphaluka ayisebenzi, enokuthintela ngokufanelekileyo ingxaki yombane.
02 Uhlobo lwebhulorho yokulungisa isiphaluka esichasene nokubuyela umva
Sebenzisa ibhulorho yokulungisa ukutshintsha igalelo lamandla kwigalelo elingeyo-polar, nokuba umbane uqhagamshelwe okanye uguqulwe, ibhodi isebenza ngokuqhelekileyo.
Ukuba i-silicon diode ine-pressure drop of about 0.6 ~ 0.8V, i-germanium diode nayo ine-pressure drop malunga ne-0.2 ~ 0.4V, ukuba ukuhla koxinzelelo kukhulu kakhulu, ityhubhu ye-MOS ingasetyenziselwa unyango oluchasayo, ukuhla koxinzelelo lwetyhubhu ye-MOS kuncinci kakhulu, ukuya kuthi ga kwi-milliohm ezimbalwa, kwaye ukuhla koxinzelelo kuphantse kungabi nanto.
I-03 ye-MOS ityhubhu ye-anti-reverse yokukhusela isiphaluka
ityhubhu ye-MOS ngenxa yokuphuculwa kwenkqubo, iipropathi zayo kunye nezinye izinto, ukuchasana kwayo kwangaphakathi kuncinci, uninzi lukwinqanaba le-milliohm, okanye lincinci, ukuze ukuhla kwamandla ombane wesekethe, ilahleko yamandla ebangelwa yisekethe incinci kakhulu, okanye ayinanto. , ngoko khetha ityhubhu yeMOS ukukhusela isiphaluka yindlela ekhuthazwayo ngakumbi.
1) Ukhuseleko lwe-NMOS
Njengoko kuboniswe ngezantsi: Ngomzuzu wokukhanya kwamandla, i-diode ye-parasitic ye-tube ye-MOS ivuliwe, kwaye inkqubo yenza i-loop. Amandla omthombo we-S malunga ne-0.6V, ngelixa amandla esango G yiVbat. Umbane wokuvula umbhobho we-MOS ugqithise kakhulu: Ugs = Vbat-Vs, isango liphezulu, i-ds ye-NMOS ivuliwe, i-diode ye-parasitic i-short-circuited, kwaye inkqubo yenza i-loop ngokufikelela kwi-ds ye-NMOS.
Ukuba unikezelo lwamandla luguqulwa, i-on-voltage ye-NMOS yi-0, i-NMOS iyanqunyulwa, i-diode ye-parasitic iguqulwa, kwaye isiphaluka sinqanyuliwe, ngaloo ndlela senza ukhuseleko.
2) Ukhuseleko lwe-PMOS
Njengoko kuboniswe ngezantsi: Ngomzuzu wokukhanya kwamandla, i-diode ye-parasitic ye-tube ye-MOS ivuliwe, kwaye inkqubo yenza i-loop. Amandla omthombo we-S malunga ne-Vbat-0.6V, ngelixa amandla esango G ngu-0. Umbane wokuvula umbhobho we-MOS ugqithise kakhulu: Ugs = 0 - (Vbat-0.6), isango liziphatha njengezinga eliphantsi. , i-ds ye-PMOS ivuliwe, i-parasitic diode i-short-circuited, kwaye inkqubo yenza i-loop nge-d access ye-PMOS.
Ukuba unikezelo lwamandla luguqulwa, i-on-voltage ye-NMOS inkulu kune-0, i-PMOS iyanqunyulwa, i-diode ye-parasitic iguqulwa, kwaye isiphaluka sinqanyuliwe, ngaloo ndlela senza ukhuseleko.
Qaphela: Iityhubhu ze-NMOS umtya we-ds ukuya kwi-electrode engalunganga, iityhubhu ze-PMOS zentambo ze-ds ukuya kwi-electrode echanekileyo, kunye nolwalathiso lwe-parasitic diode lubhekiselele kwicala langoku eliqhagamshelwe ngokuchanekileyo.
Ukufikelela kwiipali ze-D kunye ne-S ze-tube ye-MOS: ngokuqhelekileyo xa ityhubhu ye-MOS ene-N channel isetyenzisiweyo, okwangoku ingena ngokubanzi kwi-D pole kwaye iphuma kwi-S pole, kwaye i-PMOS ingena kwaye i-D iphuma kwi-S. isibonda, kwaye okuchaseneyo kuyinyaniso xa kusetyenziswe kule sekethi, imeko ye-voltage ye-tube ye-MOS idibene ngokuqhutyelwa kwe-parasitic diode.
Ityhubhu ye-MOS iya kutshintshwa ngokupheleleyo ukuba nje umbane ofanelekileyo usekwe phakathi kweepali ze-G kunye ne-S. Emva kokuqhuba, kufana nokutshintsha okuvaliweyo phakathi kwe-D kunye ne-S, kwaye yangoku ikukuchasana okufanayo ukusuka ku-D ukuya ku-S okanye ku-S ukuya ku-D.
Kwizicelo ezisebenzayo, i-G pole idityaniswa ngokubanzi kunye ne-resistor, kwaye ukuze kuthintelwe ityhubhu ye-MOS ukuba ingaphulwa, idiode yokulawula i-voltage nayo inokongezwa. I-capacitor edibeneyo ngokuhambelana ne-divider ine-soft-start effect. Okwangoku i-current iqala ukuhamba, i-capacitor ihlawuliswa kwaye i-voltage ye-G pole iyakhiwa ngokuthe ngcembe.
Kwi-PMOS, xa kuthelekiswa ne-NOMS, i-Vgs ifuneka ukuba ibe nkulu kunombane womda. Ngenxa yokuba i-voltage yokuvula ingaba yi-0, umahluko woxinzelelo phakathi kwe-DS awukho mkhulu, oluncedo ngakumbi kune-NMOS.
04 Ukhuseleko lwefuse
Iimveliso ezininzi ze-elektroniki eziqhelekileyo zinokubonwa emva kokuvula inxalenye yonikezelo lwamandla ngefuse, kunikezelo lwamandla luguqulwa, kukho isiphaluka esifutshane kwisekethe ngenxa yombane omkhulu, emva koko ifuse ivuthelwe, idlala indima ekukhuseleni wesekethe, kodwa ngale ndlela ukulungiswa kunye nokutshintshwa kunzima ngakumbi.
Ixesha lokuposa: Jul-10-2023
